Laterally scaled down tiered-edge ohmic structure of InP-based HEMTs for 2-S/mm gm and 500-GHz fT

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 775-778

  Matsuzaki, Hideaki ^a   Maruyama, Takashi ^b   Kosugi, Toshihiko ^a   Takahashi, Hiroyuki ^a   Tokumitsu, Masami ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHANNEL ESTIMATION; CUTOFF FREQUENCY; ELECTRIC CURRENTS; INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

COMPOSITE CHANNELS; CURRENT GAIN; OHMIC STRUCTURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847694292     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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