Electronic, linear, and nonlinear optical properties of III-V indium compound semiconductors

Journal of Chemical Physics

Volumn 125, Issue 3, 2006, Pages

  Reshak, Ali Hussain ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; BAND STRUCTURE; CALCULATIONS; ELECTRONIC STRUCTURE; ENERGY GAP; NONLINEAR SYSTEMS; OPTICAL PROPERTIES; SECOND HARMONIC GENERATION;

ENERGY BAND GAP; LINEAR OPTICAL PROPERTIES; NONLINEAR OPTICAL RESPONSES; NONLINEAR OPTICAL SPECTRA;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33746306158     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2209689     Document Type: Article

References (53)

1. A. A. Ketterson, W. T. Masselink, G. S. Gedyman, J. Klein, C. K. Peng, W. F. Kopp, H. Morkoc, and K. R. Gleason, IEEE Trans. Electron Devices 33, 564 (1986).
2. I. Kimukin, N. Biyikli, T. Kartaloglu, O. Aytur, and E. Ozbay, IEEE J. Sel. Top. Quantum Electron. 10, 766 (2004).
3. C. Agert, R. Beckert, V. Hinkov, A. W. Bett, and O. V. Sulima, Proceedings of 17th Photovoltaic European Conference (WIP, Munich/ETZ, Florence, 2001), p. 372.
4. M. Ruzinsky, Proceeding of 17th Photovoltaic European Conference (WIP, Munich/ETZ, Florence, 2001), p. 174.
5. M. A. Green, Proceeding of 17th Photovoltaic. European Conference (WIP, Munich/ETZ, Florence, 2001), p. 15.
6. G. J. Conibeer, J. Close, D. J. Infield, M. J. Kearney, K. H. Lam, R. Gottschalg, C. N. Jardine, R. Ruther, T. R. Betts, Proceeding of 17th Photovoltaic European Conference (WIP, Munich/ETZ, Florence, 2001), p. 269.
7. J. Touskova, Proceedings of 17th Photovoltaic European Conference (WIP, Munich/ETZ, Florence, 2001), p. 146.
8. A. W. Bett, C. Baur, R. Beckert et al., Proceeding of 17th Photovoltaic European Conference (WIP, Munich/ETZ, Florence, 2001), p. 84.
9. M. Yamaguchi, Proceeding of 17th Photovoltaic European Conference (WIP, Munich/ETZ, Florence, 2001), p. 2144.
10. P. Blaha, K. Schwarz, and J. Luitz, WIEN97, Vienna University of Technology, 1997
11. (improved and updated UNIX version of the original copywright WIEN code) which was published by P. Blaha, K. Schwartz, P. Sorantin, and S. B. Trickey, Comput. Phys. Commun. 59, 399 (1990).
12. M.-Z. Huang and W. Y. Ching, Phys. Rev. B 47, 9449 (1993);
13. M.-Z. Huang and W. Y. Ching, Phys. Rev. B 47, 9464 (1993).
14. U. von Barth and L. Hedin, J. Phys. C 5, 1629 (1972).
15. J. P. Perdew, in Electronic Structure of Solids, edited by P. Ziesche and H. Eschrig (Akademie, Berlin, 1991), p. 11.
16. J. P. Perdew, J. A. Chevary, S. H. Vosko, K. A. Jackson, M. R. Pederson, D. J. Singh, and C. Fiolhais, Phys. Rev. B 46, 6671 (1992).
17. K. Burke, J. P. Perdew, and Y. Wang, in Electronic Density Functional Theory: Recent Progress and New Directions, edited by J. F. Dobson, G. Vignale, and M. P. Das (Plenum, New York, 1998).
18. J. P. Perdew, K. Burke, and Y. Wang, Phys. Rev. B 54, 16533 (1996).
19. Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology, New Series, edited by K. H. Hellwage and A. M. Hellwege (Springer, Heidelberg, 1984), Vol. 18.
20. L. Ley, R. A. Pollak, F. R. McFeely, S. P. Kowalcyzk, and D. A. Shirley, Phys. Rev. B 9, 600 (1974).
21. Semiconductors: Group IV Elements and III-V Compounds, Landolt-Bornstein, New Series, Group III, Vol. 17, Pt. A, edited by O. Madelung (Springer, Berlin, 1982);
22. Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI, and I-VII Compounds, Landolt-Bornstein, New Series, Group III, Vol. 22, Pt. A, edited by O. Madelung (Springer, Berlin, 1987).
23. G. W. Gobeli and F. G. Allen. Phys. Rev. 137, A245 (1965).
24. J. M. Roman, 17th Photovoltaic European Conference, 2001 (unpublished).
25. X. Zhu and S. G. Louis, Phys. Rev. B 39, 7840 (1991).
26. J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
27. S. N. Rashkeev and W. R. L. Lambrecht, Phys. Rev. B 63, 165212 (2001).
28. T. Yamasaki, N. Suzuki, and K. Motizuki, J. Phys. C 20, 395 (1987).
29. D. J. Moss, E. Ghahramani, J. E. Sipe, and H. M. van Driel, Phys. Rev. B 41, 1542 (1990).
30. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
31. J. A. Van Vechten, Phys. Rev. 182, 891 (1969).
32. T. Sahu, S. K. Nayak, and R. N. Acharya, Phys. Rev. B 44, 1922 (1991).
33. D. R. Penn, Phys. Rev. 128, 2093 (1962).
34. A. H. Reshak and S. Auluk, Phys. Rev. B 68, 245113 (2003).
35. D. J. Moss, J. E. Sipe, and H. M. van Driel, Phys. Rev. B 36, 9708 (1987).
36. D. E. Aspnes, Phys. Rev. B 6, 4648 (1972).
37. B. F. Levine and C. G. Bethea, Appl. Phys. Lett. 20, 272 (1972).
38. J. J. Wynne, Phys. Rev. Lett. 27, 17 (1971).
39. G. H. Sherman and P. D. Coleman, J. Appl. Phys. 44, 238 (1973).
40. J. C. Phillips and J. A. Van Vechten, Phys. Rev. 183, 709 (1969).
41. C. Flytzanis and J. Ducuing, Phys. Rev. 178, 1218 (1969).
42. M. I. Bell, Phys. Rev. B 6, 516 (1972).
43. M. M. Choy, S. Ciraci, and R. L. Byer, IEEE J. Quantum Electron. QE-11, 40 (1975).
44. D. A. Kleinman, Phys. Rev. B 2, 3139 (1970).
45. C. L. Tang and C. Flyzanis, Phys. Rev. B 4, 2520 (1971).
46. C. L. Tang, IEEE J. Quantum Electron. QE-9, 755 (1973).
47. B. F. Levine, Phys. Rev. B 7, 2600 (1973).
48. D. F. Eaton, Science 253, 281 (1991).
49. F. G. Parsons and R. K. Chang, Opt. Commun. 3, 173 (1971).
50. D. Bethune, A. J. Schmidt, and Y. R. Shen, Phys. Rev. B 11, 3867 (1975).
51. Z. H. Levine and D. C. Allan, Phys. Rev. Lett. 66, 41 (1991).
52. J. J. Wynne and N. Bloembergen, Phys. Rev. 188, 1211 (1969).
53. C. Y. Fong and Y. R. Shen, Phys. Rev. B 12, 2325 (1975).