Structure and optical properties of sapphire implanted with boron at room temperature and 1000 °C

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 250, Issue 1-2 SPEC. ISS., 2006, Pages 81-84

  McHargue, Carl J ^a   Alves, E ^b,c   Ononye, L C ^a   Marques, C ^b,c  

^a UNIVERSITY OF TENNESSEE   (United States)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c UNIVERSITY OF LISBON   (Portugal)

Author keywords

Defect structure; Ion implantation; Sapphire

Indexed keywords

CRYSTAL DEFECTS; ION IMPLANTATION; LIGHT ABSORPTION; POSITIVE IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT STRUCTURE; GAS FORMING LIGHT IONS; PEAK DAMAGE ENERGY; RANDOM SCATTERING;

SAPPHIRE;

EID: 33746297085     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.086     Document Type: Article

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