Defect production in nitrogen implanted sapphire

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 218, Issue 1-4, 2004, Pages 222-226

  Alves, E ^a,b   Marques, C ^a,b   Ononye, L C ^c   McHargue, C ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^d UNIVERSITY OF TENNESSEE   (United States)

Author keywords

Damage studies; Ion implantation; Sapphire

Indexed keywords

ALUMINA; CRYSTAL DEFECTS; DOSIMETRY; HIGH TEMPERATURE EFFECTS; SAPPHIRE; SINGLE CRYSTALS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

DAMAGE STUDIES; DEFECT PRODUCTION; DEFECT STRUCTURES; ROOM TEMPERATURE;

ION IMPLANTATION;

EID: 2342454450     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.12.018     Document Type: Conference Paper

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