Strongly modulated conductance in Ag/PLZT/LSCO ferroelectric field-effect transistor

Ferroelectrics

Volumn 286, Issue , 2003, Pages 237-244

  Grekhov, I ^a   Delimova, L ^a   Liniichuk, I ^a   Mashovets, D ^a   Veselovsky, I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Ferroelectric memory; Field effect transistor; Perovskite

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; ELECTRIC INSULATORS; FERROELECTRICITY; PEROVSKITE; THICK FILMS;

CHANNEL CONDUCTANCE; CONDUCTANCE MODULATION; FERROELECTRIC GATE INSULATORS; FERROELECTRIC MEMORY;

FIELD EFFECT TRANSISTORS;

EID: 33746286362     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190390206419     Document Type: Conference Paper

References (5)

1. Y. Watanabe, Appl. Phys. Lett. 66(14), 1770(1995).
2. S. W. Kim and J. Lee, Integrated Ferroelectrics 18, 405 (1997).
3. J. F. Scott, K. Watanabe, A. J. Hartmann, and R. N. Lamb, Ferroelectrics 225, 83 (1999).
4. V. V. Prisedsky, V. I. Shishkovsky, and V. V. Klimov, Ferroelectrics 17, 465 (1978).
5. I. Grekhov, L. Delimova, I. Liniichuk, D. Mashovets, and I. Veselovsky, Integrated Ferroelectrics 43, 175 (2002).