Material quality characterization of CdZnTe substrates for HgCdTe epitaxy

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1495-1502

  Carini, G A ^a,b   Arnone, C ^b   Bolotnikov, A E ^a   Camarda, G S ^a   De Wames, R ^c   Dinan, J H ^d   Markunas, J K ^d   Raghothamachar, B ^e   Sivananthan, S ^f   Smith, R ^a   Zhao, J ^f   Zhong, Z ^a   James, R B ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF PALERMO   (Italy)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d U S ARMY   (United States)

^e Stony Brook University   (United States)

^f UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

CdZnTe substrate; Fourier transform infrared spectrometry (FTIR); HgCdTe; Rocking curve; X ray diffraction (XRD); X ray topography

Indexed keywords

CDZNTE SUBSTRATE; HGCDTE; ROCKING CURVE; X-RAY TOPOGRAPHY;

CADMIUM; CHARACTERIZATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN BOUNDARIES; INFORMATION ANALYSIS; INFRARED TRANSMISSION; MERCURY (METAL); SUBSTRATES; SYNCHROTRON RADIATION; TELLURIUM; X RAY DIFFRACTION;

INTERMETALLICS;

EID: 33746211389     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0291-x     Document Type: Conference Paper

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