Analysis of AVC measurements

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 344-347

  Rottinger, Martin ^a   Seifert, Norhert ^b   Selberherr, Siegfried ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b Digital Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMATIC EXTRACTION; DOPING DISTRIBUTION; MEASUREMENT DATA; P-N JUNCTION; PROBING TECHNIQUES; VOLTAGE CONTRAST;

EID: 33746133528     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. W. Werner, H. Lakatha, H. Smith, L. LeTarte, V. Ambrose, and J. Baker, "Auger Voltage Contrast Imaging for the Delineation of 2-Dimensional Junctions in Cross-sectioned MOS Devices," J. Vac. Sci. Technol., accepted for publication 1998.
2. T. Simlinger, H. Kosina, M. Rottinger, and S. Selberherr, "MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices," in 25th European Solid State Device Research Conference (H.d e Graaff and H. van Kranenburg, eds.), pp. 83-86,1995.
3. D. Kyser and D. Wittry, "Spatial Distribution of Excess Carriers in Electron-Beam Excited Semiconductors," Proc.IEEE, pp. 733-734, May 1967.
4. H. Wagner, A. Pfeiffer, C. Schiebl, and W. Werner, "Monte Carlo Simulation of Electron Scattering for Arbitrary 2D Structures Using a Modified Quadtree Geometry Discretization.," Microchim. Acta, vol. 13, p. 533, 1995.