Thermomigration technology for silicon bal grid array package fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6260, Issue , 2006, Pages

  Rudakov, Vatery I ^a   Mochalov, Boris V ^a   Plis, Nikolai I ^b  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b JSC Angstrem   (Russian Federation)

Author keywords

Packaging; Temperature gradient; Thermomigration

Indexed keywords

DIELECTRIC PENETRABILITY; PARASITIC CAPACITANCE; TEMPERATURE GRADIENT; THERMOMIGRATION;

CAPACITANCE; DIELECTRIC PROPERTIES; DISSOLUTION; INTEGRATED CIRCUITS; MECHANICAL PROPERTIES; SILICON;

ELECTRONICS PACKAGING;

EID: 33746089190     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.683487     Document Type: Conference Paper

References (5)

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2. H. Cline and T. Anthony, "High-Speed Droplet migration in Silicon", Journal of Applied Physics, Vol. 47, No. 6, pp. 22-33, June, 1976.
3. nd European Solid-State Device Research Conference (ESSDERC 2002), Florence, Italy, September-24-26, pp. 327-330, 2002.
4. B. Mochalov and V. Rudakov, "A Setup for the Temperature Gradient Heat Treatment of Semiconductor Wafers", Experimental Techniques, Vol. 39, No. 2, pp. 302-304, 1996.
5. rd European Microelectronics and Packaging Symposium, Prague, Czech Republic, June 16-18, pp. 453-458, 2004.