Realization of a SCR on an epitaxial substrate using al thermomigration

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 327-330

  Morillon, Benjamin ^a   Dilhac, Jean Marie ^b   Auriel, Gerare ^a   Ganibal, Christian ^b   Anceau, Christine ^a  

^a STMICROELECTRONICS   (France)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BUDGET CONTROL; DIFFUSION; LIQUIDS;

BORON DIFFUSIONS; DIFFUSION PHENOMENA; EPITAXIAL SUBSTRATES; INNOVATIVE STRUCTURES; LIQUID DROPLETS; POWER THYRISTOR; SOLID-STATE DIFFUSION; VERTICAL TEMPERATURE GRADIENTS;

DIFFUSION IN SOLIDS;

EID: 33746031993     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194935     Document Type: Conference Paper

References (4)

1. T. R. Anthony, J. K. Boah, M. F. Chang, H. E. Cline, "Thermomigration Processing of Isolation Grids in Power Structures", IEEE Trans. Electron Devices, 23, (1976), pp. 818-823.
2. J-M. Dilhac, C. Ganibal, "Temperature Gradient Rapid Thermal Processor", 197th ECS Meeting, Toronto (Canada), May 2000, ECS Proc. Vol 2000-9, pp. 421-428.
3. B. Morillon, J-M. Dilhac, C. Ganibal, C. Anceau, "Realization of Deep P+ Zones by Al Thermomigration in a Temperature Gradient RTP Furnace", 199th ECS Meeting, Washington DC (USA), March 2001, ECS Proc. Vol 2001-9, pp.393-400.
4. H. E. Cline, T. R. Anthony, "Thermomigration of Aluminum-Rich Liquid Wires through Silicon", J. Appi. Phys., Al, (1976), pp. 2332-2336.