Application of a high-durability DC arc plasmatron to plasma-chemical processing of silicon substrates

Journal of the Korean Physical Society

Volumn 48, Issue 6, 2006, Pages 1696-1701

  Riaby, Valentin A ^a   Plaksin, Vadim Yu ^a   Kim, Ji Hun ^a   Mok, Young Sun ^a   Lee, Heon Ju ^a   Choi, Chi Kyu ^a  

^a Jeju National University   (South Korea)

Author keywords

Arc discharge; Distributed anode arc spot; Plasma chemical etching; Plasmatron; Process gas activation

Indexed keywords

EID: 33746084478     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. D. G. Bykhovsky and A. Ya. Medvedev, A Device for Plasma Processing of Metals, Soviet Inventor's Certificate No. 287214, B23K 10/00 Class, 15.11.1968.
2. Matsushita Electric Works, NAIS/Aiplasma, (http://www.aiplasma.com).
3. A. I. Apunevich and E. I. Titarenko, Electric Arc Plasma Torch, RF Patent RU2112635 C1, Class B23K 10/01, 1997 (http://www.multiplaz.ru).
4. A. L. Suris, Plasma-Chemical Processes and Apparatus (Khimiya, Moscow, 1989).
5. I. G. Kesaev, Cathode Processes of the Electric Arc (NAUKA, Moscow, 1968).
6. V. A. Shadov, thesis of candidate dissertation, Moscow Aviation Institute, 1967.
7. A. Rabinovich, D. Cohn and L. Bromberg, US Patent No. 5425332, US Class 123/3, 1995.
8. D. R. Cohn, L. Bromberg, A. Rabinovich and N. Alexeev, US Patent 6322757 B1, C1. B01J 19/08, Nov. 27, 2001.
9. B. Kim, J. Kim, S. H. Lee, J. Park and B. T. Lee, J. Korean Phys. Soc. 47, 712 (2005).
10. D. P. Kim, K. T. Kim, A. M. Efremov and C. I. Kim, J. Korean Phys. Soc. 44, 1 (2004).