Analysis of N isotope depth profiles in search for reaction of implanted nitrogen with substrate near Si3N4-nitride-film and SiO2-glass-substrate interface

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 185-188

  Matsunami, N ^a   Murase, T ^a   Tazawa, M ^b   Ninad, S ^a   Fukuoka, O ^a   Shimura, T ^a   Sataka, M ^c   Chimi, Y ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Interface reaction; N isotope ion implantation; Si3N4 film on SiO2 substrate

Indexed keywords

DEPOSITION; GLASS; INTERFACES (MATERIALS); ION IMPLANTATION; LIGHT ABSORPTION; MAGNETRON SPUTTERING; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE;

INTERFACE REACTIONS; N ISOTOPE ION IMPLANTATION; NUCLEAR REACTION ANALYSIS (NRA); OPTICAL ABSORPTION SPECTRA; SI3N4 FILM ON SIO2 SUBSTRATES;

ISOTOPES;

EID: 33745835119     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.03.110     Document Type: Article

References (6)

1. Webb A.P., and Townsend P.D. J. Phys. D 9 (1976) 1343
2. Hosono H. J. Non-Cryst. Solids 187 (1995) 457
3. Ziegler J.F., Biersack J.P., and Littmark U. The Stopping and Range of Ions in Solids (1985), Pergamon Press, New York
4. N. Matsunami (private communication).
5. N. Matsunami (private communication) and the value is somewhat larger than 1.35 mb/sr at 150° with 1.2 MeV d (Ion beam handbook, J.R. Tesmer, M. Nastasi, J.C. Barbour, J.W. Mayer, MRS, 1995).
6. Vickridge I.C., Trompetter W.J., and Coote G.E. Nucl. Instr. and Meth. B 108 (1996) 367