1.5 μm luminescence of silicon nanowires fabricated by thermal evaporation of SiO

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 8, 2006, Pages

  Jia, G ^a,b   Kittler, M ^a,b   Su, Z ^c   Yang, D ^d   Sha, J ^c  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c ZHEJIANG UNIVERSITY   (China)

^d ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENCE BANDS; SI BAND-TO-BAND LINE; SILICON NANOWIRES (NW); THERMAL EVAPORATION;

BAND STRUCTURE; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; HEAT TREATMENT; NANOSTRUCTURED MATERIALS; SILICA;

EVAPORATION;

EID: 33745788803     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200622143     Document Type: Article

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