Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

Applied Physics Letters

Volumn 89, Issue 1, 2006, Pages

  Tyschenko, I E ^a   Zhuravlev, K S ^a   Cherkov, A G ^a   Popov, V P ^a   Misiuk, A ^b   Yankov, R A ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HIGH PRESSURE EFFECTS; HYDROGEN; HYDROSTATIC PRESSURE; ION IMPLANTATION; OPTICAL RESONATORS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

HIGH PRESSURE ANNEALING; HYDROSTATIC PRESSURES; OPTICAL RESONANT CAVITY; WAVELENGTH-SELECTIVE ENHANCEMENT;

PHOTOLUMINESCENCE;

EID: 33745769021     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219146     Document Type: Article

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