Progress of topcoat and resist development for 193nm immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  Ohmori, Katsumi ^a   Ando, Tomoyuki ^a   Takayama, Toshikazu ^a   Ishizuka, Keita ^a   Yoshida, Masaki ^a   Utsumi, Yoshiyuki ^a   Endo, Kotaro ^a   Iwai, Takeshi ^a  

^a TOKYO OHKA KOGYO CO LTD   (Japan)

Author keywords

193nm immersion lithography; Immersion dedicated resist; Immersion defect; Topcoat

Indexed keywords

ACTIVATION ENERGY; COST EFFECTIVENESS; DEFECTS; HYDROPHOBICITY; LEACHING; LITHOGRAPHY; POLYMERS;

193NM IMMERSION LITHOGRAPHY; IMMERSION DEDICATED RESIST; IMMERSION DEFECT; TOPCOAT;

PHOTORESISTS;

EID: 33745604016     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656360     Document Type: Conference Paper

References (6)

1. T. Ogata, S. Furuya, K. Kasai, H. Hada and M. Shirai: Jpn. J. Appl. Phys. Vol. 45, in press.
2. M. Sato: "TOK Resist & Material Development Status for Immersion Lithography", Litho Forum in Los Angeles, January, 2004
3. H. Tusji, M. Yoshida, K. Ishiduka, T. Hirano, K. Endo, M. Sato: Proc. SPIE 5753 (2005) 102
4. K. Ohmori, T. Ando, H. Tsuji, M. Yoshida, K. Ishiduka, T. Hirano, H. Yukawa: International Symposium on Immersion Lithography 2005, O22
5. K. Nakano, S. Nagaoka, S. Owa: International Symposium on Immersion Lithography 2005, O08
6. T. Ando, T. Takayama, H. Tsuji, K. Ishiduka, M. Yoshida, T. Hirano, J. Yokoya and K. Ohmori, Dig. Paper of International Microprocesses ana Nanotechnology Conference, 54, 2005.