Growth of indium nanorods by magnetron sputtering

Chinese Physics Letters

Volumn 23, Issue 6, 2006, Pages 1627-1630

  Wei, He Lin ^a   Huang, Han Chen ^b   Zhang, Xi Xiang ^c  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETRON SPUTTERING; NANORODS; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; X RAY DIFFRACTION;

FILM MORPHOLOGY; GRAIN COALESCENCE; HIGH DIFFUSIVITIES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LOW MELTING POINT; MAGNETRON-SPUTTERING; MEAN DIAMETER; SILICON SUBSTRATES; SPUTTERING TECHNIQUES; SURFACE UNDULATION;

INDIUM;

EID: 33745602313     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/6/075     Document Type: Article

References (13)

1. Waser R 2003 Nanoelectronics and Information Technology (New York: Wiley)
2. Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
3. Parthasarathy R V, Phani K L N and Martin C R 1995 Adv. Mater. 7 896
4. Wang N et al 1998 Appl. Phys. Lett. 73 3902
5. Cheng Y T, Weiner A M, Wong C A and Balogh M P 2002 Appl. Phys. Lett. 81 3248
6. Wei H L et al 2002 Appl. Phys. Lett. 80 2290
7. Hamberg I and Granqvist C G 1986 J. Appl. Phys. 60 R123
8. Tamaki J et al 2002 Sensors and Actuators B 83 190
9. Li C et al 2003 Adv. Mater. 15 143
10. Jia H B et al 2003 Appl. Phys. Lett. 82 4146
11. Wei H L, Zhang X X and Huang H 2006 Chin. Phys. Lett. (submited)
12. Peng X S et al 2002 J. Mater. Chem. 12 1602
13. Brunner K 2002 Rep. Prog. Phys. 65 27