Fundamental parameter extraction for a dry/immersion hybrid photoresist for contact hole applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  Robertson, Stewart A ^a   Yamada, Shintaro ^a   Leonard, Joanne M ^a  

^a ROHM AND HAAS COMPANY   (United States)

Author keywords

Diffusion co efficients; Dissolution rates; Immersion lithography; Lithography simulation

Indexed keywords

CONTACT HOLE; DIFFUSION CO-EFFICIENTS; DISSOLUTION RATES; IMMERSION LITHOGRAPHY; LITHOGRAPHY SIMULATION;

COMPUTER SIMULATION; DIFFUSION; DISSOLUTION; IMAGING TECHNIQUES; LITHOGRAPHY; PARAMETER ESTIMATION;

PHOTORESISTS;

EID: 33745597942     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.658030     Document Type: Conference Paper

References (4)

1. Chen, J.H. et al., "Characterization of ArF immersion process for production", Optical Microlithography XVIII, pp 13-22, SPIE Vol. 5754, 2005.
2. Szmanda,C.R. et al., "A Simple method for measuring acid generation quantum efficiency at 193nm", Adv. Resist Technology XVI, pp 157-166, SPIE Vol. 3678, 1999.
3. Smith et al., "Amphibian XIS: an immersion lithography microstepper platform", Optical Microlithography XVIII, pp 751-759, SPIE Vol. 5754, 2005.
4. Scheer, S.A. et al., "The design of a cost effectivemulti wavelength development rate monitoring tool", Metrology, Inspection and process control for microlithography XVI, pp 937-948, SPIE Vol. 4689, 2002.