Modeling of the formation and properties of nanocrystals in insulator matrices (SiO2:Si, ZrO2(Y):Zr) produced by ion implantation

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 757-760

  Eckstein, W ^a   Gorshkov, O N ^b   Kasatkin, A P ^b   Novikov, V A ^b   Tetelbaum, D I ^b   Trushin, S A ^b   Ostashov, A S ^b   Mikhailov, A N ^b  

^a MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BROKEN BONDS; DOSE DEPENDENCES; MEAN SIZE; MONTE CARLO; NANO INCLUSION; NI SURFACE; NONRADIATIVE CENTERS; OPTICAL TRANSMISSIONS; PHOSPHORUS DOPING; PHOTOLUMINESCENCE INTENSITIES; QUANTUM DOT;

LIGHT TRANSMISSION; PASSIVATION; PHOSPHORUS; SILICON; SILICON COMPOUNDS; ZIRCONIUM; ZIRCONIUM ALLOYS;

ION IMPLANTATION;

EID: 33745586112     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924264     Document Type: Conference Paper

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