Phase shift mask for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6151 II, Issue , 2006, Pages

  Constancias, C ^a   Richard, M ^a   Joyeux, D ^b   Chiaroni, J ^a   Blanc, R ^a   Robic, J Y ^a   Quesnel, E ^a   Muffato, V ^a  

^a CEA LETI   (France)

^b CNRS/LCF IOTA   (United States)

Author keywords

EUV; Extrem Ultraviolet lithography; Interferometer; Mask; Multilayer; Phase Shift Mask

Indexed keywords

EXTREM ULTRAVIOLET (EUV) LITHOGRAPHY; PHASE SHIFT MASKS (PSM); PHASE SHIFT SAMPLE (PSS); TECHNOLOGICAL DEVELOPMENTS;

ETCHING; INTERFEROMETERS; MASKS; MOLYBDENUM; MULTILAYERS; PHASE SHIFT; ULTRAVIOLET RADIATION;

PHOTOLITHOGRAPHY;

EID: 33745584334     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.655583     Document Type: Conference Paper

References (4)

1. S-I. Han & al., "Novel Design of Att-PSM Structure for Extrem Ultra Vilet Lithography an Enhancement on Image Contrast During inspection », Emerging Lithographic Technologies VI, SPIE Proceeding volume 4688, pp. 481-494, (2002)
2. S-I. Han & al., "Design an Method of Fabrication Phase Shift Masks for Extreme Ultravilet Lithography by Partial Etching into the EUV Multilayer Mirror", Emerging Lithographic Technologies VII, SPIE Proceeding volume 5037, pp. 414-330, (2003)
3. B. Lafontaine from AMD. Oral presentation at EUVL Symposium 2005 in San Diego: "Printing EUV Phase-Shift Masks using the 0.3NA Berkeley MET"
4. A.Nugrowati, A. S. van de Nes, S. F. Pereira, J. J. M. Braat, "Enhanced imaging in EUV lithography by optimising the Mo/Si thickness ratio in 2-D phase shifting mask design", EOS Topical Meeting, 2005.