Fabrication and characterization of molecular beam epitaxy grown thin-film GaAs waveguides for mid-infrared evanescent field chemical sensing

Analytical Chemistry

Volumn 78, Issue 12, 2006, Pages 4224-4227

  Charlton, Christy ^a   Giovannini, Marcella ^b   Faist, Jérôme ^b   Mizaikoff, Boris ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACETIC ANHYDRIDE; EVANESCENT FIELD ABSORPTION; QUANTUM CASCADE LASERS; SILVER HALIDE WAVEGUIDES;

DISTRIBUTED FEEDBACK LASERS; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

WAVEGUIDES;

ACETIC ANHYDRIDE; ARSENIC; GALLIUM; HALIDE; SILVER;

ARTICLE; BIOSENSOR; DEVICE; EVANESCENT FIELD; FIELD EMISSION; FILM; INFRARED RADIATION; LASER; LIQUID; MID INFRARED; MOLECULAR BEAM EPITAXY; MOLECULE; QUANTUM CASCADE LASER; RADIATION BEAM; RADIATION FIELD; TECHNIQUE;

EQUIPMENT DESIGN; INFRARED RAYS; LASERS; OPTICS; OPTICS AND PHOTONICS; QUANTUM THEORY; SENSITIVITY AND SPECIFICITY; SPECTROSCOPY, FOURIER TRANSFORM INFRARED;

EID: 33745287213     PISSN: 00032700     EISSN: None     Source Type: Journal    
DOI: 10.1021/ac052214a     Document Type: Article

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