Nonlinear HEMT modeling using artificial neural network technique

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 469-472

  Gao, Jianjun ^a   Zhang, Lei ^a   Xu, Jianjun ^a   Zhang, Qi Jun ^a  

^a CARLETON UNIVERSITY   (Canada)

Author keywords

HEMT; Neural networks; Nonlinear modeling

Indexed keywords

EQUIVALENT CIRCUITS; HARMONIC ANALYSIS; MATHEMATICAL MODELS; NEURAL NETWORKS; NONLINEAR PROGRAMMING; PARAMETER ESTIMATION;

HARMONIC PERFORMANCE; NONLINEAR ELEMENTS; NONLINEAR MODELING; PARAMETER EXTRACTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33745239682     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516631     Document Type: Conference Paper

References (12)

1. W. R. Curtice and M. Ettemberg, "A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers," IEEE Trans. Microwave Theory Tech., vol.33, pp. 1383-1394, June 1985.
2. L. Angelov, L. Bengtsson, M. Garcia, "Extensions of the Chalmers nonlinear HEMT and MESFET model," IEEE Trans. Microwave Theory Tech, vol. 44, pp. 1664 - 1674 Oct. 1996.
3. S. A. Maas and A. Crosmun, "Modeling the gate I_V characteristic of a GaAs MESFET for Volterra-series analysis," IEEE Trans. Microwave Theory Techniques, vol. 37, pp. 1134-1136, July 1989.
4. D. Root, S. Fan, and J. Meyer, "Technology independent large-signal nonquasi-static FET models by direct construction from automatically characterized device data," in Proc. 21st Europ. Microwave Conf., Stuttgart, Germany, pp. 923-927, 1991.
5. J. Rousset et al., "An accurate neural network model of FET for inter modulationand power analysis," in Proc. 26th Europ. Microwave Conf.,Prague, Czechoslovakia, 1996.
6. K. Shirakawa et al., "A large signal characterization of an HEMT using a multilayered neural network," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 1630-1633, Sept. 1997.
7. K. Shirakawa, et al, "Structural determination of multilayered large-signal neural-network HEMT model," IEEE Trans. Microwave Theory Tech., vol 46, pp. 1367 - 1375, Oct. 1998.
8. J. Xu, M.C.E. Yagoub, R. Ding, and Q-J Zhang, "Exact adjoint sensitivity analysis for neural-based microwave modeling and design," IEEE Trans. Microwave Theory Techniques, vol 51, pp. 226-237, Jan. 2003.
9. M. Lazaro, L. Santamaria, C. Pantaleon, "Neural networks for large- and small-signal modeling of MESFET/HEMT transistors," IEEE Trans. on Instrumentation and Measurement, vol. 50, pp. 1587-1593, Dec. 2001.
10. D.M.M.-P. Schreurs, J. Verspecht, S. Vandenberghe, E. Vandamme, "Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements," IEEE Trans. Microwave Theory Tech., vol. 50, pp. 2315- 2319. Oct. 2002.
11. P. M. White and R. M. Healy, "Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from 'ColdFET' measurements," IEEE Microwave Guided Wave Lett., vol. 3, pp. 453-454, Dec. 1993.
12. K. Shirakawa, H. Oikawa, T. Shimura, et al, "An approach to determining an equivalent circuit for HEMTs," IEEE Trans, Microwave Theory Tech., vol. 43, pp.499-503, March, 1995.