Stability of electron-beam poling in N or Ge-doped H:Si O2 films

Applied Physics Letters

Volumn 88, Issue 24, 2006, Pages

  Liu, Q ^a,b   Poumellec, B ^b   Blum, R ^b   Girard, G ^c   Boure J E ^c   Kudlinski, A ^d   Martinelli, G ^d  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b CNRS   (France)

^c LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^d UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRON BEAMS; GERMANIUM; IONIC CONDUCTION; NITROGEN; SECOND HARMONIC GENERATION; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

E-BEAM POLING; ELECTRON-BEAM POLING; THERMALLY POLED SAMPLE; WATER MOLECULES;

THIN FILMS;

EID: 33745221884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208960     Document Type: Article

References (6)

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