The change of electric field and of some other insulating properties during isochronal annealing in thermally poled Ge-doped silica films

Applied Physics Letters

Volumn 87, Issue 12, 2005, Pages 1-3

  Liu, Qiming ^a,e   Poumellec, Bertrand ^a   Braga, Delfin ^b   Blaise, Guy ^b   Ren, Yitao ^c,f   Kristensen, Martin ^c,d  

^a UNIVERSITÉ PARIS SUD   (France)

^b UNIVERSITÉ PARIS SUD   (France)

^c TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^d AARHUS UNIVERSITY   (Denmark)

^e WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^f ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; GERMANIUM; INSULATING MATERIALS; SILICA; THIN FILMS;

INSULATING PROPERTIES; SILICA FILMS;

ELECTRIC FIELDS;

EID: 28344451420     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2053361     Document Type: Article

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