High density and low power nonvolatile FeRAM with non-driven plate and selected driven bit-line scheme

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue CIRCUITS SYMP., 2004, Pages 446-447

  Hirano, Hiroshige ^a   Sakagami, Masahiko ^a   Yamaoka, Kunisato ^a   Nakakuma, Tetsuji ^a   Iwanari, Shunichi ^a   Murakuki, Yasuo ^a   Miki, Takashi ^a   Gohou, Yasushi ^a   Fujii, Eiji ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; LSI CIRCUITS; POWER SUPPLY CIRCUITS; SCANNING ELECTRON MICROSCOPY; TRANSISTORS; TUNGSTEN;

DISCHARGE CURRENTS; MEMORY CELLS; POWER CONSUMPTION; VOLTAGE DIFFERENCE;

RANDOM ACCESS STORAGE;

EID: 4544226074     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. K. Yamaoka, et al., ISSCC Digest of Technical Digest, 2-6, Feb. 2004.
2. T. Sakata, et al., VLSI Circuits Digest, 5-4, Jun. 1996
3. G. Braun, et al., VLSI Circuits Digest, 10-3, Jun. 1999