Detecting a disturbed layer on a silicon surface by means of monochromatic null ellipsometry

Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

Volumn 73, Issue 3, 2006, Pages 212-216

  Ayupov, B M ^a   Kozlova, N A ^b  

^a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; CRYSTALS; ELLIPSOMETRY; GRINDING (COMMINUTION); MONOCHROMATORS; SURFACE PROPERTIES;

DISTURBED LAYER; MONOCHROMATIC NULL ELLIPSOMETRY; SILICON SURFACE;

SILICON WAFERS;

EID: 33745158649     PISSN: 10709762     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOT.73.000212     Document Type: Article

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