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Volumn 109, Issue 4, 1998, Pages 145-149

Determination of optical properties variation of silicon and glass surfaces after mechanical and plasma treatments by monochromatic ellipsometry

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELLIPSOMETRY; GLASS; INVERSE PROBLEMS; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PLASMA APPLICATIONS; SILICON;

EID: 0032302879     PISSN: 00304026     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (14)

References (16)
  • 3
    • 1542672044 scopus 로고
    • Characterization of real surfaces
    • Vedam K, So SS : Characterization of real surfaces. Surf. Sci. 29 (1972) 379-395
    • (1972) Surf. Sci. , vol.29 , pp. 379-395
    • Vedam, K.1    So, S.S.2
  • 5
    • 0012955837 scopus 로고
    • Determination of damaged-layer parameters and contamination degree of polished surface for transparent materials
    • in Russian
    • Afanase'eva AG, Gavrilenko OF, Matshina NP, Nesmelov EA: Determination of damaged-layer parameters and contamination degree of polished surface for transparent materials. Opt. Spectrosk. 69 (1990) 1145-1150 (in Russian)
    • (1990) Opt. Spectrosk. , vol.69 , pp. 1145-1150
    • Afanase'eva, A.G.1    Gavrilenko, O.F.2    Matshina, N.P.3    Nesmelov, E.A.4
  • 6
    • 33847596250 scopus 로고
    • Dielectric function and optical parameters of Si, Ge, GaP, GaAs, GaSb, GaP, InAs and InSb for 1.5 to 6.0eV
    • Aspnes DE, Studna AA: Dielectric function and optical parameters of Si, Ge, GaP, GaAs, GaSb, GaP, InAs and InSb for 1.5 to 6.0eV. Phys. Rev. B 27 (1983) 985-1008
    • (1983) Phys. Rev. B , vol.27 , pp. 985-1008
    • Aspnes, D.E.1    Studna, A.A.2
  • 7
    • 0014719901 scopus 로고
    • Analysis and corrections of instrumental errors in ellipsometry
    • McCrakin F: Analysis and corrections of instrumental errors in ellipsometry. J. Opt. Soc. Am. 60 (1970) 57-63
    • (1970) J. Opt. Soc. Am. , vol.60 , pp. 57-63
    • McCrakin, F.1
  • 10
    • 0344459180 scopus 로고
    • Remarks on the Brewster angle and some applications
    • Junck G: Remarks on the Brewster angle and some applications. Phil. Mag. B. 70 (1994) 493-498
    • (1994) Phil. Mag. B , vol.70 , pp. 493-498
    • Junck, G.1
  • 11
    • 1542777480 scopus 로고
    • Influence of roughness and damaged-layer on the polarizing parameters of light reflected from monocrystalline silicon
    • in Russian
    • Ayupov BM, Jushina IV: Influence of roughness and damaged-layer on the polarizing parameters of light reflected from monocrystalline silicon. Electron. Techn. ser. Materialy No 5 (259) (1991) pp. 71-73 (in Russian)
    • (1991) Electron. Techn. Ser. Materialy No 5 , Issue.259 , pp. 71-73
    • Ayupov, B.M.1    Jushina, I.V.2
  • 12
    • 1542672043 scopus 로고    scopus 로고
    • The determination of disturbed layer on the surface of the monocrystaline wafers by position of the principal angle of incidence
    • in Russian
    • Ayupov BM: The determination of disturbed layer on the surface of the monocrystaline wafers by position of the principal angle of incidence. Poverchnost No 11 (1996) 74-78 (in Russian)
    • (1996) Poverchnost No 11 , pp. 74-78
    • Ayupov, B.M.1
  • 14
    • 1542672042 scopus 로고
    • Ellipsometric procedure for measurement of reflective matrix of weakly absorbed medium
    • In Russian
    • Tronin AJu: Ellipsometric procedure for measurement of reflective matrix of weakly absorbed medium. Pribori i technika experimenta. No. 6 (1989) 123-126 (In Russian)
    • (1989) Pribori i Technika Experimenta , vol.6 , pp. 123-126
    • Tronin, A.Ju.1
  • 15
    • 1542462639 scopus 로고    scopus 로고
    • Determination of anisotropy by calibration of the ellipsometer azimuthal scales
    • Ayupov BM: Determination of anisotropy by calibration of the ellipsometer azimuthal scales. Optoelectr. Instrum. and Data Process. No. 1 (1997) 85-89
    • (1997) Optoelectr. Instrum. and Data Process , vol.1 , pp. 85-89
    • Ayupov, B.M.1
  • 16
    • 0017266754 scopus 로고
    • Chemical etching of silicon. IV. Etching technology
    • Schwatz B, Robbins H: Chemical etching of silicon. IV. Etching technology. J. Electrochcm. Soc. 123 (1976) 1903-1909
    • (1976) J. Electrochcm. Soc. , vol.123 , pp. 1903-1909
    • Schwatz, B.1    Robbins, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.