Highly scalable MRAM using field assisted current induced switching

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 184-185

  Jeong, W C ^a   Park, J H ^a   Oh, J H ^a   Jeong, G T ^a   Jeong, H S ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; OPTIMIZATION; SWITCHING; TUNNEL JUNCTIONS;

CURRENT INDUCED SWITCHING; MAGNETIC TUNNEL JUNCTIONS; MRAM; WRITING DISTURBANCE;

RANDOM ACCESS STORAGE;

EID: 33745135081     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469260     Document Type: Conference Paper

References (5)

1. R. Scheuerlein, et al., ISSCC Dig. Tech. Papers, p. 128 (2000)
2. M. Durlam et al., Symp. on VLSI Circuits, p.158 (2002)
3. E.B. Myers et al., Science 285, 867-870 (1999)
4. J.Z. Sun et al., Appl. Phys. Lett. 81, p. 2202 (2002)
5. J.A. Katine et al., Phys. Rev. Lett. 84, p. 3149 (2000)