Thermodynamic magnetization of a strongly correlated two-dimensional electron system

Annals of Physics

Volumn 321, Issue 7, 2006, Pages 1588-1601

  Kravchenko, S V ^a   Shashkin, A A ^a,b   Anissimova, S ^a   Venkatesan, A ^a   Sakr, M R ^a   Dolgopolov, V T ^b   Klapwijk, T M ^c  

^a NORTHEASTERN UNIVERSITY   (United States)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Effective mass; g Factor; Magnetization; Pauli spin susceptibility; Phase transition; Strongly correlated electrons; Two dimensional electron systems

Indexed keywords

EID: 33745054684     PISSN: 00034916     EISSN: 1096035X     Source Type: Journal    
DOI: 10.1016/j.aop.2006.04.004     Document Type: Article

References (41)

1. Landau L.D. Sov. Phys. JETP 3 (1957) 920
2. Wigner E. Phys. Rev. 46 (1934) 1002
3. Tanatar B., and Ceperley D.M. Phys. Rev. B 39 (1989) 5005
4. Benenti G., Waintal X., and Pichard J.-L. Phys. Rev. Lett. 83 (1999) 1826
5. Attaccalite C., Moroni S., Gori-Giorgi P., and Bachelet G.B. Phys. Rev. Lett. 88 (2002) 256601
6. von Löhneysen H. Adva. in Solid State Phys. 30 (1990) 95
7. Okamoto T., Hosoya K., Kawaji S., and Yagi A. Phys. Rev. Lett. 82 (1999) 3875
8. Zhu J., Stormer H.L., Pfeiffer L.N., Baldwin K.W., and West K.W. Phys. Rev. Lett. 90 (2003) 056805
9. Kravchenko S.V., and Sarachik M.P. Rep. Prog. Phys. 67 (2004) 1
10. Shashkin A.A. Phys. Usp. 48 (2005) 129
11. Shashkin A.A., Kravchenko S.V., Dolgopolov V.T., and Klapwijk T.M. Phys. Rev. Lett. 87 (2001) 086801
12. Stormer H., Haavasoja T., Narayanamurti V., Gossard A.C., and Wiegmann W. J. Vac. Sci. Technol. B 1 (1983) 423
13. Meinel I., Grundler D., Bargstadt-Franke S., Heyn C., and Heitmann D. Appl. Phys. Lett. 70 (1997) 3305
14. Fang F.F., and Stiles P.J. Phys. Rev. B 28 (1983) 6992
15. Eisenstein J.P. Appl. Phys. Lett. 46 (1985) 695
16. Eisenstein J.P., Stormer H.L., Narayanamurti V., Cho A.Y., Gossard A.C., and Tu C.W. Phys. Rev. Lett. 55 (1985) 875
17. Wiegers S.A.J., Specht M., Levy L.P., Simmons M.Y., Ritchie D.A., Cavanna A., Etienne B., Martinez G., and Wyder P. Phys. Rev. Lett. 79 (1997) 3238
18. Zhu M., Usher A., Matthews A.J., Potts A., Elliott M., Herrenden-Harker W.G., Ritchie D.A., and Simmons M.Y. Phys. Rev. B 67 (2003) 155329
19. Prus O., Yaish Y., Reznikov M., Sivan U., and Pudalov V. Phys. Rev. B 67 (2003) 205407
20. Mott N.F., and Davis E.A. Electronic Processes in Non-Crystalline Materials (1971), Clarendon Press, Oxford, UK
21. Dolgopolov V.T., and Gold A. Phys. Rev. Lett. 89 (2002) 129701
22. Gold A., and Dolgopolov V.T. J. Phys.: Condens. Mat. 14 (2002) 7091
23. Shashkin A.A., Kravchenko S.V., and Klapwijk T.M. Phys. Rev. Lett. 87 (2001) 266402
24. To deal with this problem, the "subtraction of the diamagnetic contribution" was suggested in Ref. [11]. The diamagnetic contribution Δ was determined in the partially-polarized regime as the difference between the direct magnetization data ("Mag") and the data obtained from Shubnikov-de Haas oscillations ("SdH"): Δ = Mag-SdH. The experimental data were then corrected by Δ. We find this procedure meaningless as it essentially results in replacing the magnetization data by Shubnikov-de Haas data: Mag-Δ = Mag-(Mag-SdH) = SdH. In fact, the difference between magnetization and Shubnikov-de Haas data in their experiment is likely to be due to the presence of a band tail of localized electrons at all electron densities in their sample.
25. B.
26. The critical density for the MIT was determined from transport measurements (see Refs. [6,15]).
27. c speaks in favor of the strongly correlated liquid being close to the crystal [20].
28. Castaing B., and Nozières P. J. Phys. (Paris) 40 (1979) 257
29. MacDonald A.H., Oji H.C.A., and Liu K.L. Phys. Rev. B 34 (1986) 2681
30. Efros A.L. Solid State Commun. 65 (1988) 1281
31. Kravchenko S.V., Pudalov V.M., and Semenchinsky S.G. Phys. Lett. A 141 (1989) 71
32. Eisenstein J.P., Pfeiffer L.N., and West K.W. Phys. Rev. Lett. 68 (1992) 674
33. B=0 (for more on this procedure, see Ref. [26]).
34. Khrapai V.S., Shashkin A.A., and Dolgopolov V.T. Phys. Rev. Lett. 91 (2003) 126404
35. Khrapai V.S., Shashkin A.A., and Dolgopolov V.T. Phys. Rev. B 67 (2003) 113305
36. The bare valley splitting is independent of the magnetic field and does not contribute to ∂μ/∂B. However, it may be enhanced by inter-level interactions [26]. The fact that ∂μ/∂B for ν < 2 and ν > 2 are parallel to each other ensures that a possible influence of the enhanced valley splitting is negligible in our experiment.
37. Shashkin A.A., Kravchenko S.V., Dolgopolov V.T., and Klapwijk T.M. Phys. Rev. B 66 (2002) 073303
38. The effects of finite layer thickness, which lead to an increase of the effective mass with parallel magnetic field, are negligible in silicon MOSFETs [6].
39. Vitkalov S.A., Zheng H., Mertes K.M., Sarachik M.P., and Klapwijk T.M. Phys. Rev. Lett. 85 (2000) 2164
40. * hc / 2 eB) ≈ 59 °.
41. Punnoose A., and Finkelstein A.M. Science 310 (2005) 289