Laser induced nitridation of Ga on GaAs surfaces

Applied Surface Science

Volumn 96-98, Issue , 1996, Pages 359-362

  Barthe, M F ^a   Perrin, C ^a   Vivet, L ^b   Dubreuil, B ^b   Gibert, T ^b  

^a Centre National de la Recherche Scientifique   (France)

^b UNIVERSITÉ D'ORLÉANS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; LASER APPLICATIONS; LASER BEAMS; LIGHT ABSORPTION; MASS SPECTROMETRY; NEODYMIUM LASERS; NITROGEN FIXATION; SEMICONDUCTING GALLIUM; SURFACE TREATMENT; SURFACES; ULTRAVIOLET RADIATION;

LASER DESORPTION MASS SPECTROMETRY; LASER INDUCED NITRIDATION; LASER TREATMENT; NEODYMIUM YTTRIUM ALUMINUM GARNET LASER; ULTRAVIOLET LASER BEAM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030563002     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00444-0     Document Type: Article

References (4)

1. L. Vivet, M.F. Barthe, T. Gibert and B. Dubreuil, J. Phys. IV Coll. C4, Suppl. J. Phys. III 4 (1994) 115.
2. X.Y. Zhu, M. Wolf, T. Huett and J.M. White, J. Chem. Phys. 97 (1992) 5856.
3. K. Wang, J. Singh and D. Pavlidis, J. Appl. Phys. 76 (1994) 3502.
4. N.K. Singh, A.J. Murell and J.S. Foord, Surf. Sci. 274 (1992) 341.