Hot-carrier aging of NMOST in analog circuits with large periodic drain signal

Solid-State Electronics

Volumn 50, Issue 5, 2006, Pages 727-732

  Habaš, Predrag ^a  

^a EM Microelectronic   (Switzerland)

Author keywords

Analog circuits; Degradation; Hot carriers; Large periodic signals; Lifetime; MOSFET

Indexed keywords

APPROXIMATION THEORY; DEGRADATION; HOT CARRIERS; MATHEMATICAL MODELS; SIGNAL PROCESSING; WAVEFORM ANALYSIS;

ANALOG CIRCUITS; DRAIN-SIGNALS; LARGE PERIODIC SIGNALS; LIFETIME;

MOSFET DEVICES;

EID: 33744939984     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.02.014     Document Type: Article

References (13)

1. Quader K., Fang P., Yue J.T., Ko P., and Hu C. Hot-carrier-reliability design rules for translating device degradation to CMOS digital circuit degradation. IEEE Tran Electron Dev 41 (1994) 681
2. Mistry K., and Doyle B. AC versus DC hot-carrier degradation in n-channel MOSFET's. IEEE Tran Electron Dev 40 1 (1993) 96
3. Hun Y., Yang D., and Sung Y. Analysis of circuit degradation due to hot-carrier effects in 64 Mb DRAMs. Solid-State Electron 39 10 (1996) 1501
4. Ito A. A simple method to estimate lifetime of NMOSFET's in the circuits using DC stress data. IEEE Tran Electron Dev 42 6 (1995) 1193
5. Horiuchi T. In-circuit hot-carrier model and its application to inverter chain optimization. IEEE Tran Electron Dev 43 9 (1996) 1428
6. Das A.G.M., and Johnson S. Improved reliability of biastable circuits by selective hot-carrier stress reduction. Microelectron Reliab 38 (1998) 1177
7. Thewes R., and Weber W. Effects of hot-carrier degradation in analog CMOS circuits. Microelectron Eng 36 (1997) 285
8. Hu C., Tam S.C., Hsu F.-C., Ko P.-K., Chan T.-Y., and Terrill K.W. Hot-electron-induced MOSFET degradation - model, monitor, and improvement. IEEE Tran Electron Dev 32 (1985) 375
9. Habaš P., Bellens R., and Groeseneken G. A model study of the hot-carrier problem in LDD and overlapped LDD MOSFETs. Microelectron Eng 28 (1995) 285
10. Shimoyama N., and Tsuchiya T. AC hot-carrier-degradation mechanism in LDDMOSFET's. Int Conf SSDM, Tsukuba (1992) 518
11. Weber W., and Brox M. Dynamic effects in hot-carrier degradation relevant for CMOS operation. Microelectron Eng 19 (1992) 453
12. Bellens R., DeSchrijver E., Bosch G.v., Groeseneken G., Heremans P., and Maes H. On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors. IEEE Tran Electron Dev 41 (1994) 413
13. Abramowitz M., and Stegun I. Handbook of mathematical functions (1970), Dover Edition, New York Expression (7.1.25)