Alloy segregation, quantum confinement, and carrier capture in self-ordered pyramidal quantum wires

Nano Letters

Volumn 6, Issue 5, 2006, Pages 1036-1041

  Zhu, Q ^a   Pelucchi, E ^a   Dalessi, S ^a   Leiter, K ^a,b   Dupertuis, M A ^a   Kapon, E ^a  

^a EPFL   (Switzerland)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

SELF-ORDERED PYRAMIDAL QUANTUM WIRES; VERTICAL QUANTUM WELLS (VQW); VERTICAL QUANTUM WIRES (VQWR);

CARRIER MOBILITY; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33744926160     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl060066d     Document Type: Article

References (26)

1. Jaskólski, W. Phys. Rep. 1996, 271, 1.
2. Hess, H. F.; Betzig, E.; Harris, T. D.; Pfeiffer, L. N.; West, K. W. Science 1994, 264, 1740.
3. (a) Vouilloz, F.; Oberli, D. Y.; Dwir, B.; Reinhardt, F.; Kapon, E. Solid State Commun. 1998, 108, 945.
4. (b) Bellessa, J.; Voliotis, V.; Grousson, R.; Wang, X. L.; Ogura, M.; Matsuhata, H. Appl. Phys. Lett. 1997, 71, 2481.
5. (a) Akiyama, H.; Yoshita, M.; Pfeiffer, L. N.; West, K. W. J. Phys.: Condens. Matter 2004, 16, S3549.
6. (b) Guillet, T.; Grousson, R.: Voliotis, V.; Wang, X. L.; Ogura, M. Phys. Rev. B 2003, 68, 045319.
7. Dwir, B.; Leifer, K.; Kapon, E. Phys. Rev. B 2003, 67, 075302(1-9).
8. Schedelbeck, G.; Wegscheider, W.; Bichler, M.; Abstreiter, G. Science 1997, 278, 1792.
9. (a) Mårtensson, T.; Borgström, M.; Seifert, W.; Ohlsson, B. J.; Samuelson, L. Nanotechnology 2003, 14, 1255.
10. (b) Cui, Y.; Lauhon, L. J.; Gudiksen, M. S.; Wang, J. F.; Lieber, C. M. Appl. Phys. Lett. 2001, 78, 2214.
11. Hartmann, A.; Ducommun, Y.; Leifer, K.; Kapon, E. J. Phys.: Condensed Matter 1999, 11, 5901-5915.
12. Hartmann, A.; Loubies, L.; Reinhardt, F.; Kapon, E. Appl. Phys. Lett. 1997, 71, 1314.
13. (a) Biasiol, G.; Kapon, E. Phys. Rev. Lett. 1998, 81, 2962.
14. (b) Biasiol, G.; Gustafsson, A.; Leifer, K.; Kapon, E. Phys. Rev. B 2002, 65, 205306.
15. Biasiol, G.; Martinet, E.; Reinhardt, F.; Gustafsson, A.; Kapon, E. J. Cryst. Growth 1997, 170, 600.
16. Watanabe, S.; Pelucchi, E.; Dwir, B.; Baier, M.; Leifer, K.; Kapon, E. Appl. Phys. Lett. 2004, 84, 2907.
17. Reinhardt, F.; Dwir, B.; Biasiol, G.; Kapon, E. Appl. Phys. Lett. 1996, 68, 3168.
18. Bosio, C.; Staehli, J. L.; Guzzi, M.; Burri, G.; Logan, R. A. Phys. Rev. B 1988, 38, 3263.
19. Bastard, G. Wave Mechanics Applied to Semiconductor Heterostructures; Les Editions de Physique: LesUlis, 1988.
20. This procedure neglects quantization and excitonic effects (which partly compensate each other), without significantly affecting our composition estimation.
21. Biasiol, G. Formation Mechanisms of Low-Dimensional Semiconductor Nanostructures Grown by OMCVD on Nonplannar Substrates. Ph.D. Thesis, Swiss Federal Institute of Technology, Lausanne, 1998.
22. Dalessi, S.; Michelini, F.; Dupertuis, M.-A., to be submitted for publication.
23. Walther, M.; Kapon, E.; Christen, J.; Hwang, D. M.; Bhat, R. Appl. Phys. Lett. 1992, 60, 521.
24. Leifer, K.; Hartmann, A.; Ducommun, Y.; Kapon, E. Appl. Phys. Lett. 2000, 77, 24.
25. Hilmer, H.; Forchel, A.; Hansmann, S.; Morohashi, M.; Lopez, E.; Meier, H. P.; Ploog, K. Phys. Rev. B 1989, 39, 10901.
26. Shen, H.; Pan, S. H.; Hang, Z.; Leng, J.; Pollak, F. H.; Woodall, J. M.; Sacks, R. N. Appl. Phys. Lett. 1988, 53, 1080.