Structure and optical properties of semiconductor quantum nanostructures self-formed in inverted tetrahedral pyramids

Journal of Physics Condensed Matter

Volumn 11, Issue 31, 1999, Pages 5901-5915

  Hartmann, A ^a   Ducommun, Y ^a   Leifer, K ^a   Kapon, E ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ENERGY GAP; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032595720     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/31/302     Document Type: Article

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