Simple wide-band on-chip inductor model for silicon-based RF ICs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 35-38

  Gil, Joonho ^a   Shin, Hyungcheol ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Capacitance; CMOS process; Electrical resistance measurement; Inductance; Inductors; Predictive models; Radio frequency; Semiconductor device modeling; Silicon; Wideband

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC INDUCTORS; ELECTRIC RESISTANCE; INDUCTANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON;

CMOS PROCESSS; ELECTRICAL RESISTANCE MEASUREMENT; PREDICTIVE MODELS; RADIO FREQUENCIES; WIDE-BAND;

SEMICONDUCTOR DEVICE MODELS;

EID: 33744820893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233631     Document Type: Conference Paper

References (16)

1. M. Je, I. Kwon, H. Shin, and K. Lee, "MOSFET modeling and parameter extraction for RF-IC's," a book chapter in CMOS RF Modeling, Characterization and Applications, World Scientific, pp. 67-120, 2002.
2. D. Leenaerts, G. Gielen, and R. A. Rutenbar, "CAD solutions and outstanding for mixed-signal and RF IC design," IEEE/ACM Int. Conf. Computer Aided Design, pp. 270-277, 2001.
3. J. R. Long and M. A. Copeland, "The modeling, characterization, and design of monolithic inductors for silicon RF IC's," IEEE J. Solid-State Circuits, vol. 32, pp. 357-368, 1997.
4. A. M. Niknejad and R. G. Meyer, "Analysis, design, and optimization of spiral inductors and transformers for Si RF IC's," IEEE J. Solid-State Circuits, vol. 33, pp. 1470-1481, 1998.
5. C. P. Yue and S. S. Wong, "Physical modeling of spiral inductors on silicon," IEEE Trans. Electron Devices, vol. 47, pp. 560-568, Mar. 2000.
6. M. Park, et al., "Frequency-dependent series resistance of monolithic spiral inductors," IEEE Microwave and Guided Wave Letters, vol. 9, No. 12, pp. 514-516, Dec. 1999.
7. W. B. Kuhn and N. M. Ibrahim, "Analysis of current crowding effects in multiturn spiral inductors," IEEE Trans. Microwave Theory and Techniques, vol. 49, pp. 31-38, Jan. 2001.
8. T. Kamgaing, T. Myers, M. Petras, and M. Miller, "Modeling of frequency dependent losses in two-port and three-port inductors on silicon," IEEE MTT-S, pp. 153-156, 2002.
9. C-J. Chao, S-C. Wong, C-J. Hsu, M-J. Chen, and L-Y. Leu, "Characterization and modeling of on-chip inductor substrate coupling effect," IEEE RF-ICs Symp., pp. 311-314, 2002.
10. Y. Cao, et al., "Frequency-independent equivalent circuit model for on-chip spiral inductors," IEEE Custom Integrated Circuits Conf., pp. 217-220, 2002.
11. G. Grau, et al., "A current-folded up-conversion mixer and VCO with center-tapped inductor in a SiGe-HBT technology for 5-GHz wireless LAN applications," IEEE J. Solid-state Circuits, vol.35, no.9, pp. 1345-1352, Sep. 2000.
12. W. Jin, et al., "Silicon substrate coupling noise modeling, analysis, and experimental verification for mixed signal integrated circuit design," IEEE MTT-S, pp. 1727-1730, 2001.
13. A. Adan, M. Fukumi, K. Higashi, T. Suyama, M. Miyamoto, and M. Hayashi, "Electromagnetic coupling effects in RFCMOS circuits," IEEE Radio Frequency Integrated Circuits Symposium, pp 293-296, 2002.
14. J. Zheng, Y-C. Hahm, V. K. Tripathi, and A. Weisshaar, "CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate," IEEE Trans. Microwave Theory and Techniques, vol. 48, No. 9, pp. 1443-1451, Sep. 2000.
15. A. Aktas and M. Ismail, "Pad de-embedding in RF CMOS," IEEE Circuits and Devices Magazine, vol. 17 Issue 3, pp. 8-11, May 2001.
16. C. P. Yue and S. S. Wong, "On-chip spiral inductors with patterned ground shields for Si-based RF IC's," IEEE J. Solid-State Circuits, vol. 33, pp. 743-752, 1998.