메뉴 건너뛰기




Volumn 6, Issue 4, 2006, Pages 808-812

Field-effect doping phenomenon in an organic semiconductor layer deposited by the Langmuir-Blodgett technique

Author keywords

Carrier doping; Langmuir Blodgett films; Model; Organic FET; Organic n type semiconductor

Indexed keywords

FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING; THICK FILMS;

EID: 33744736287     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2005.04.045     Document Type: Article
Times cited : (4)

References (15)
  • 1
    • 33744717963 scopus 로고    scopus 로고
    • Proceedings of the International Conference on Synthetic Metals, Shanghai 2002, Synth. Met. 135-137 (2003).
  • 10
    • 33744726327 scopus 로고    scopus 로고
    • note
    • This value corresponds to the dielectric constant of general hydrocarbons.
  • 11
    • 33744771776 scopus 로고    scopus 로고
    • note
    • 18TCNQ reported in [5].
  • 12
    • 33744721215 scopus 로고    scopus 로고
    • note
    • -1 was used.
  • 13
    • 33744743417 scopus 로고    scopus 로고
    • note
    • 0 themselves, is necessary. In other words, the material used for the insulator layer is not important in the present model.
  • 14
    • 0004149484 scopus 로고
    • Maruzen, Tokyo p. 369 [in Japanese]
    • Ziman J.M. Models of disorder (1982), Maruzen, Tokyo p. 369 [in Japanese]
    • (1982) Models of disorder
    • Ziman, J.M.1
  • 15
    • 33744753893 scopus 로고    scopus 로고
    • note
    • All charge carriers considered in this paper are mobile so that their spatial distribution reaches the equilibrium. However, some of them cannot rapidly move and are not relevant with the electrical conduction in the usual sense.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.