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Volumn 43, Issue 2, 2004, Pages 448-451

Thin film growth of ionic conducting membranes by PIMOCVD;Crecimiento de películas delgadas de membranas de conducción iónica medlante la técnica PIMOCVD

Author keywords

Ionic conductor; MOCVD; Thin film; YSZ; Yttria stabilised Zirconia

Indexed keywords

DROPS; ELECTRODES; FILM GROWTH; FILM PREPARATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POTENTIOMETRIC SENSORS; SOLID OXIDE FUEL CELLS (SOFC); THIN FILMS; VAPOR DEPOSITION; YTTRIA STABILIZED ZIRCONIA; YTTRIUM OXIDE; ZIRCONIA;

EID: 33744725777     PISSN: 03663175     EISSN: None     Source Type: Journal    
DOI: 10.3989/cyv.2004.v43.i2.564     Document Type: Conference Paper
Times cited : (2)

References (15)
  • 2
    • 0003075792 scopus 로고    scopus 로고
    • Fabrication and performance of thin-film YSZ solid oxide fuel cells
    • C. Wang, W.L. Worrel, S. Park, J.M. Vohs, R.J. Garte; Fabrication and Performance of Thin-Film YSZ Solid Oxide Fuel Cells, J. Electrochem Soc. 148 (8) A864-868 (2001)
    • (2001) J. Electrochem Soc. , vol.148 , Issue.8
    • Wang, C.1    Worrel, W.L.2    Park, S.3    Vohs, J.M.4    Garte, R.J.5
  • 3
    • 0034251121 scopus 로고    scopus 로고
    • Preparation of yttria stabilized zirconia membranes on porous substrates by a dip-coating process
    • C. Xia, S. Zha, W. Yang, R. Peng, D. Peng, G. Meng; Preparation of yttria stabilized zirconia membranes on porous substrates by a dip-coating process, Solid State Ionics 133 (2000) 287-294
    • (2000) Solid State Ionics , vol.133 , pp. 287-294
    • Xia, C.1    Zha, S.2    Yang, W.3    Peng, R.4    Peng, D.5    Meng, G.6
  • 5
    • 0030678195 scopus 로고    scopus 로고
    • Oxygen permeation through thin zirconia/yttria membranes prepared by EVD
    • J. Han, G. Xomeritakis, Y.S. Lin, Oxygen permeation through thin zirconia/yttria membranes prepared by EVD, Solid State Ionics 93 (1997) 263-272
    • (1997) Solid State Ionics , vol.93 , pp. 263-272
    • Han, J.1    Xomeritakis, G.2    Lin, Y.S.3
  • 6
    • 0025207647 scopus 로고
    • Growth rates and mechanism of electrochemical vapor deposited yttria-stabilized zirconia films
    • M.F. Carolan, J.M. Michaels, Growth rates and mechanism of electrochemical vapor deposited yttria-stabilized zirconia films, Solid State Ionics 37 (1990) 189.
    • (1990) Solid State Ionics , vol.37 , pp. 189
    • Carolan, M.F.1    Michaels, J.M.2
  • 7
    • 0035254812 scopus 로고    scopus 로고
    • The transport mechanism of YSZ thin films prepared bv MOCVD
    • S-Y. Chun, N. Mizutami, The transport mechanism of YSZ thin films prepared bv MOCVD, Applied Surface Science 171 (2001) 82-88
    • (2001) Applied Surface Science , vol.171 , pp. 82-88
    • Chun, S.-Y.1    Mizutami, N.2
  • 8
    • 0031187407 scopus 로고    scopus 로고
    • Metal-organic vapor deposition of YSZ electrolyte layers for solid oxide fuel cell applications
    • K-W. Chour, J. Chen, R. Xu, Metal-organic vapor deposition of YSZ electrolyte layers for solid oxide fuel cell applications, Thin Solid Films 304 (1997) 106-112
    • (1997) Thin Solid Films , vol.304 , pp. 106-112
    • Chour, K.-W.1    Chen, J.2    Xu, R.3
  • 10
    • 0030106861 scopus 로고    scopus 로고
    • 2 doped YSZ film son porous ceramic supports for membrana application
    • 2 doped YSZ film son porous ceramic supports for membrana application, Chem. Vap. Deposition 1996, 2, N°2, p48-51
    • (1996) Chem. Vap. Deposition , vol.2 , Issue.2 , pp. 48-51
    • Xia, C.1    Ward, T.L.2    Schwartz, R.W.3
  • 12
    • 0037156023 scopus 로고    scopus 로고
    • Progress in ion-transport inorganic membranes by novel chemical vapor deposition (CVD) techniques
    • G.Y. Meng, H.Z. Song, H.B. Wang, C.R. Xia, D.K. Peng; Progress in ion-transport inorganic membranes by novel chemical vapor deposition (CVD) techniques, Thin Solid Films 409 (2002) 105
    • (2002) Thin Solid Films , vol.409 , pp. 105
    • Meng, G.Y.1    Song, H.Z.2    Wang, H.B.3    Xia, C.R.4    Peng, D.K.5
  • 13
    • 84876658987 scopus 로고    scopus 로고
    • Patent n°93/08838- Precédé et dispositif d'introduction de précurseurs dans une enceinte de dépôt»- PCT n°FR94/00858 (Europe, USA)
    • J.P. Sénateur, F. Weiss, O. Thomas, R. Madar, A. Abrutis, Patent n°93/08838- Precédé et dispositif d'introduction de précurseurs dans une enceinte de dépôt»- PCT n°FR94/00858 (Europe, USA)
    • Sénateur, J.P.1    Weiss, F.2    Thomas, O.3    Madar, R.4    Abrutis A5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.