-
1
-
-
0033719495
-
Fabrication of thin electrolytes for second-generation solid oxide fuel cells
-
J. Will, A. Mitterdorfer, C. Kleinlogel, D. Perednis, L.J. Gauckler, Fabrication of thin electrolytes for second-generation solid oxide fuel cells, Solid State Ionics 131 (2000) 79-96
-
(2000)
Solid State Ionics
, vol.131
, pp. 79-96
-
-
Will, J.1
Mitterdorfer, A.2
Kleinlogel, C.3
Perednis, D.4
Gauckler, L.J.5
-
2
-
-
0003075792
-
Fabrication and performance of thin-film YSZ solid oxide fuel cells
-
C. Wang, W.L. Worrel, S. Park, J.M. Vohs, R.J. Garte; Fabrication and Performance of Thin-Film YSZ Solid Oxide Fuel Cells, J. Electrochem Soc. 148 (8) A864-868 (2001)
-
(2001)
J. Electrochem Soc.
, vol.148
, Issue.8
-
-
Wang, C.1
Worrel, W.L.2
Park, S.3
Vohs, J.M.4
Garte, R.J.5
-
3
-
-
0034251121
-
Preparation of yttria stabilized zirconia membranes on porous substrates by a dip-coating process
-
C. Xia, S. Zha, W. Yang, R. Peng, D. Peng, G. Meng; Preparation of yttria stabilized zirconia membranes on porous substrates by a dip-coating process, Solid State Ionics 133 (2000) 287-294
-
(2000)
Solid State Ionics
, vol.133
, pp. 287-294
-
-
Xia, C.1
Zha, S.2
Yang, W.3
Peng, R.4
Peng, D.5
Meng, G.6
-
4
-
-
0034319910
-
Preparation of thin film SUFCs working at reduced temperature
-
P. Charpentier, P. Fragnaud, D.M. Schleich, E. Gehain, Preparation of thin film SUFCs working at reduced temperature, Solid State Ionics 135 (2000) 373-380
-
(2000)
Solid State Ionics
, vol.135
, pp. 373-380
-
-
Charpentier, P.1
Fragnaud, P.2
Schleich, D.M.3
Gehain, E.4
-
5
-
-
0030678195
-
Oxygen permeation through thin zirconia/yttria membranes prepared by EVD
-
J. Han, G. Xomeritakis, Y.S. Lin, Oxygen permeation through thin zirconia/yttria membranes prepared by EVD, Solid State Ionics 93 (1997) 263-272
-
(1997)
Solid State Ionics
, vol.93
, pp. 263-272
-
-
Han, J.1
Xomeritakis, G.2
Lin, Y.S.3
-
6
-
-
0025207647
-
Growth rates and mechanism of electrochemical vapor deposited yttria-stabilized zirconia films
-
M.F. Carolan, J.M. Michaels, Growth rates and mechanism of electrochemical vapor deposited yttria-stabilized zirconia films, Solid State Ionics 37 (1990) 189.
-
(1990)
Solid State Ionics
, vol.37
, pp. 189
-
-
Carolan, M.F.1
Michaels, J.M.2
-
7
-
-
0035254812
-
The transport mechanism of YSZ thin films prepared bv MOCVD
-
S-Y. Chun, N. Mizutami, The transport mechanism of YSZ thin films prepared bv MOCVD, Applied Surface Science 171 (2001) 82-88
-
(2001)
Applied Surface Science
, vol.171
, pp. 82-88
-
-
Chun, S.-Y.1
Mizutami, N.2
-
8
-
-
0031187407
-
Metal-organic vapor deposition of YSZ electrolyte layers for solid oxide fuel cell applications
-
K-W. Chour, J. Chen, R. Xu, Metal-organic vapor deposition of YSZ electrolyte layers for solid oxide fuel cell applications, Thin Solid Films 304 (1997) 106-112
-
(1997)
Thin Solid Films
, vol.304
, pp. 106-112
-
-
Chour, K.-W.1
Chen, J.2
Xu, R.3
-
9
-
-
0032048371
-
Yttria-stabilized zirconia obtained by MOCVD: Applications
-
G. Garcia, A. Figueras, J. Casado, J. llibre, M. Mocha, G. Petot-Ervas, J. Calderer; Yttria-stabilized zirconia obtained by MOCVD: applications, Thin Solid Films 317 (1998) 241-244
-
(1998)
Thin Solid Films
, vol.317
, pp. 241-244
-
-
Garcia, G.1
Figueras, A.2
Casado, J.3
Llibre, J.4
Mocha, M.5
Petot-Ervas, G.6
Calderer, J.7
-
10
-
-
0030106861
-
2 doped YSZ film son porous ceramic supports for membrana application
-
2 doped YSZ film son porous ceramic supports for membrana application, Chem. Vap. Deposition 1996, 2, N°2, p48-51
-
(1996)
Chem. Vap. Deposition
, vol.2
, Issue.2
, pp. 48-51
-
-
Xia, C.1
Ward, T.L.2
Schwartz, R.W.3
-
12
-
-
0037156023
-
Progress in ion-transport inorganic membranes by novel chemical vapor deposition (CVD) techniques
-
G.Y. Meng, H.Z. Song, H.B. Wang, C.R. Xia, D.K. Peng; Progress in ion-transport inorganic membranes by novel chemical vapor deposition (CVD) techniques, Thin Solid Films 409 (2002) 105
-
(2002)
Thin Solid Films
, vol.409
, pp. 105
-
-
Meng, G.Y.1
Song, H.Z.2
Wang, H.B.3
Xia, C.R.4
Peng, D.K.5
-
13
-
-
84876658987
-
-
Patent n°93/08838- Precédé et dispositif d'introduction de précurseurs dans une enceinte de dépôt»- PCT n°FR94/00858 (Europe, USA)
-
J.P. Sénateur, F. Weiss, O. Thomas, R. Madar, A. Abrutis, Patent n°93/08838- Precédé et dispositif d'introduction de précurseurs dans une enceinte de dépôt»- PCT n°FR94/00858 (Europe, USA)
-
-
-
Sénateur, J.P.1
Weiss, F.2
Thomas, O.3
Madar, R.4
Abrutis A5
-
14
-
-
0034180055
-
Pulsed Injection MOCVD of Functional Electronic Oxides
-
J.P. Sénateur, C. Dubourdieu, F. Weiss, M. Rosina, A. Abrutis, Pulsed Injection MOCVD of Functional Electronic Oxides, Adv. Mat. Opt. Electron. 10 (2000) 155-161
-
(2000)
Adv. Mat. Opt. Electron.
, vol.10
, pp. 155-161
-
-
Sénateur, J.P.1
Dubourdieu, C.2
Weiss, F.3
Rosina, M.4
Abrutis, A.5
-
15
-
-
0343826081
-
Growth of oxide buffer layers and YBCO film son various substrates bv pulsed injection CVD
-
Pr8-689
-
A. Abrutis, V. Plausinaitiene, A. Teiserskis, V. Kubilius, Z. Saltyte, J.P. Senateur, L. Dapkus, Growth of oxide buffer layers and YBCO film son various substrates bv pulsed injection CVD, Journal de Physique IV Vol 9 (1999) Pr8-689
-
(1999)
Journal de Physique IV
, vol.9
-
-
Abrutis, A.1
Plausinaitiene, V.2
Teiserskis, A.3
Kubilius, V.4
Saltyte, Z.5
Senateur, J.P.6
Dapkus, L.7
|