Process optimization for monolithic integration of piezoresistive pressure sensor and MOSFET amplifier with SOI approach

Journal of Physics: Conference Series

Volumn 34, Issue 1, 2006, Pages 210-215

  Kumar, V Vinoth ^a   Dasgupta, A ^a   Bhat, K N ^a   Knatarajan, N ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

Author keywords

Anisotropic etching; MOS integrated pressure sensor; SOI wafer

Indexed keywords

EID: 33744517014     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/34/1/035     Document Type: Article

References (3)

1. Mosser V, J Suski, J Goss and E Obermeier 1991 Piezoresitive pressure sensors based on Polycrystalline silicon Sensors Actuators 28 113-132
2. Schafer H, V Greeter and R Kobs 1989 Temperature-independent pressure sensors using polycrystalline silicon strain gauges Sensors Actuators 17 521-527
3. Chingwen Yeh, Khalil Najafi 1998 CMOS Interface circuitry for a low-voltage micromachined Tunneling Acceleromete J. Microelectromechanical systems 7 6-15 no.1