Modelling velocity saturation effects in polysilicon thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 B, 2006, Pages 4374-4377

  Valletta, A ^a   Gaucci, P ^a   Mariucci, L ^a   Fortunato, G ^a  

^a IFN CNR   (Italy)

Author keywords

Device simulation; GCA; Polysilicon TFT; Quasi 2D model; Velocity saturation

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; POLYSILICON;

DEVICE SIMULATION; GRADUAL CHANNEL APPROXIMATION (GCA); POLYSILICON TFT; QUASI 2D MODEL; VELOCITY SATURATION;

THIN FILM TRANSISTORS;

EID: 33744502105     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4374     Document Type: Article

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