Polarization-independent InGaAlAs/InAlAs electroabsorption modulators with an optimized strained-MQW

CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

Volumn 2, Issue , 1999, Pages 191-192

  Akage, Y ^a   Takeuchi, H ^a   Tsuzuki, K ^a   Kondo, S ^a   Noguchi, Y ^a   Okamoto, H ^a   Yamanaka, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MODULATORS; POLARIZATION; ABSORPTION SPECTROSCOPY; BAND STRUCTURE; COMPUTER SIMULATION; LIGHT ABSORPTION; LIGHT POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EA MODULATORS; INGAALAS; POLARIZATION INDEPENDENT; SUBBAND STRUCTURES; SYNTHETIC APPROACH;

ELECTROABSORPTION MODULATORS; LIGHT MODULATORS;

ELECTROABSORPTION MODULATORS; POLARIZATION DEPENDENT LOSS; QUANTUM CONFINED STARK EFFECT; VALENCE SUBBAND STRUCTURE;

EID: 0033308061     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEOPR.1999.811368     Document Type: Conference Paper

References (5)

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2. K. Wakita, K. Yoshino, I. Kotaka, and Y. Noguchi:"High speed, high efficiency modulator module with polarization insensitivity and very low chirp", Electron. Lett., 1995, Vol. 31, No. 23, pp. 2041-2042.
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5. S. Chelles, R. Ferreira, P. Voisin, A. Ougazzaden, M. Allovon, and A. Carenco:"Efficient polarization insensitive electroabsorption modulator using strained InGaAsP-based quantum wells", Appl. Phys. Lett., 1994 Vol. 64, No. 26.27, pp. 3530-3532.