Novel damage curing technology on one-mask etched ferroelectric capacitor for beyond 0.25 μm FRAM

Integrated Ferroelectrics

Volumn 53, Issue , 2003, Pages 307-315

  Park, J H ^a   Kim, H H ^a   Jang, N W ^a   Song, Y J ^a   Joo, H J ^a   Kang, H Y ^a   Lee, S Y ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Etching damage; FRAM; O2 plasma treatment; PZT; Wet cleaning

Indexed keywords

CERAMIC CAPACITORS; CURING; FERROELECTRIC DEVICES; FERROELECTRICITY; NONVOLATILE STORAGE; PLASMA ETCHING;

CAPACITOR ETCHING TECHNOLOGY; FERROELECTRIC CAPACITOR; FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); NOVEL DAMAGE CURING TECHNOLOGY; WET CLEANING;

RANDOM ACCESS STORAGE;

EID: 33646946387     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390258228     Document Type: Article

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