Synthesis of dense polycrystalline GaN of high purity by the chemical vapor reaction process

Journal of Crystal Growth

Volumn 286, Issue 1, 2006, Pages 50-54

  Wang, Buguo ^a,b   Callahan, Michael ^b   Bailey, John ^a  

^a SOLID STATE SCIENTIFIC CORPORATION   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A1. Dense polycrystalline GaN; A2. Chemical vapor reaction process (CVRP); A3. Vapor synthesis; B1. Halides; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; NITRIDES; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; REACTION KINETICS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); VAPORS;

CHEMICAL VAPOR REACTION PROCESS (CVRP); DENSE POLYCRYSTALLINE GAN; VAPOR SYNTHESIS;

GALLIUM NITRIDE;

EID: 28244493711     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.017     Document Type: Article

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