Relationship between Sr2(Ta1-xNbx) 2O7 crystal phase and RF-sputtering plasma condition for metal-ferroelectric-insulator-Si structure device formation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3207-3212

  Takahashi, Ichirou ^a   Sakurai, Hiroyuki ^a   Isogai, Tatsunori ^a   Hirayama, Masaki ^a   Teramoto, Akinobu ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Ferroelectric crystallization on amorphous insulator; High crystallization annealing temperature; MFIS FET; Microwave excited plasma; Rf sputtering plasma; Sr2(Ta1 xNbx)2O7 (STN)

Indexed keywords

FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; PERMITTIVITY; RANDOM ACCESS STORAGE; SPUTTERING; STRONTIUM COMPOUNDS;

FERROELECTRIC CRYSTALLIZATION ON AMORPHOUS INSULATORS; HIGH CRYSTALLIZATION ANNEALING TEMPERATURE; MFIS-FET; MICROWAVE-EXCITED PLASMA; RF-SPUTTERING PLASMA; SR2(TA1-XNBX)2O7 (STN);

CRYSTALS;

EID: 33646901865     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3207     Document Type: Article

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