A low-dielectric-constant Sr2Ta1-xNbx 2O7 thin film controlling the crystal orientation on an IrO2 substrate for one-transistor-type ferroelectric memory device

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2194-2198

  Takahashi, Ichirou ^a   Sakurai, Hiroyuki ^a   Yamada, Atsuhiko ^a   Funaiwa, Kiyoshi ^a   Goto, Tetsuya ^a   Hirayama, Masaki ^a   Teramoto, Akinobu ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Controlling the orientation; Ferroelectric thin film; IrO2; Low dielectric constant; MFMIS FET; Plasma physical vapor deposition; Sr2(Ta1 x,Nbx)2O7 (STN)

Indexed keywords

ANNEALING; CAPACITORS; COERCIVE FORCE; CRYSTAL ORIENTATION; DIELECTRIC DEVICES; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HEAT RESISTANCE; LATTICE CONSTANTS; LITHOGRAPHY; PERMITTIVITY; PEROVSKITE; PHYSICAL VAPOR DEPOSITION; STRONTIUM COMPOUNDS;

FERROELECTRIC MEMORY DEVICES; FILM FORMATION TECHNOLOGY; PLASMA PHYSICAL VAPOR DEPOSITION; STN CAPACITORS;

FERROELECTRIC THIN FILMS;

EID: 3142577186     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2194     Document Type: Conference Paper

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