Effect of impurity oxygen concentration on the thermoelectric properties of hot-pressed Zn4Sb3

Journal of Alloys and Compounds

Volumn 417, Issue 1-2, 2006, Pages 259-263

  Ueno, K ^a   Yamamoto, A ^a   Noguchi, T ^a   Li, C H ^a   Inoue, T ^a   Sodeoka, S ^a   Obara, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Electronic transport; Intermetallic; Powder metallurgy; Semiconductor

Indexed keywords

ABSORPTION; ANTIMONY; HOT PRESSING; INTERMETALLICS; OXYGEN; POWDER METALLURGY; THERMOELECTRICITY;

ELECTRONIC TRANSPORT; HOT-PRESSED ZN4SB3; OXYGEN CONCENTRATION;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 33646877012     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2005.09.014     Document Type: Article

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