Reaction of implanted N isotope with SiO2 Near Si 3N4-film and SiO2-substrate interface

Journal of Nuclear Science and Technology

Volumn 43, Issue 4, 2006, Pages 382-385

  Shinde, Ninad ^a   Matsunami, Noriki ^a   Fukuoka, Osamu ^a   Tazawa, Masato ^b   Shimura, Tetsuo ^a   Chimi, Yasuhiro ^c   Sataka, Masao ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Implantation; Interface reaction; Nitrogen 15 isotope rich film; Nuclear reaction analysis; Optical absorption; Rutherford backscattering spectroscopy; Silicon nitride

Indexed keywords

IMPLANTATION; INTERFACE REACTION; NITROGEN 15 ISOTOPE RICH FILM; NUCLEAR REACTION ANALYSIS;

DEPOSITION; GLASS; ISOTOPES; LIGHT ABSORPTION; MAGNETRON SPUTTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; SUBSTRATES;

ION IMPLANTATION;

EID: 33646811169     PISSN: 00223131     EISSN: 00223131     Source Type: Journal    
DOI: 10.3327/jnst.43.382     Document Type: Article

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