The effect of doping level and sintering temperature on Jc (H) performance in nano-SiC doped and pure MgB 2 wires

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Shcherbakova, O ^a   Dou, S X ^a   Soltanian, S ^a,b   Wexler, D ^a   Bhatia, M ^c   Sumption, M ^c   Collings, E W ^c  

^a UNIVERSITY OF WOLLONGONG   (Australia)

^b UNIVERSITY OF KURDISTAN   (Iran)

^c Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SINTERING TEMPERATURE; SUPERCONDUCTING PROPERTIES;

DOPING (ADDITIVES); HEAT TREATMENT; MAGNESIUM COMPOUNDS; SINTERING;

SILICON CARBIDE;

EID: 33646737619     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173639     Document Type: Article

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