Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Cardoso, S ^c   Ferreira, R ^c   Silva, F ^c   Freitas, P P ^c   Melo, L V ^a   Sousa, R C ^c   Redon, O ^c   MacKenzie, M ^b   Chapman, J N ^b  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GERMANIUM COMPOUNDS; MAGNETORESISTANCE; THERMAL EFFECTS; TUNNEL JUNCTIONS;

BLOCKING TEMPERATURE; DOUBLE-BARRIER MAGNETIC TUNNEL JUNCTION (MTJ); MAGNETIC SWITCHING; MAGNETORESISTIVE RANDOM ACCESS MEMORY CELLS; THERMAL BARRIERS;

SEMICONDUCTOR JUNCTIONS;

EID: 33646733584     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2162813     Document Type: Article

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