Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 19, 2006, Pages

  Marlow, C A ^a   Taylor, R P ^a   Martin, T P ^a   Scannell, B C ^a   Linke, H ^a   Fairbanks, M S ^a   Hall, G D R ^a   Shorubalko, I ^b   Samuelson, L ^c   Fromhold, T M ^d   Brown, C V ^e   Hackens, B ^f   Faniel, S ^f   Gustin, C ^f   Bayot, V ^f   Wallart, X ^g   Bollaert, S ^g   Cappy, A ^g  

^a UNIVERSITY OF OREGON   (United States)

^b UNIVERSITY OF LATVIA   (Latvia)

^c LUND UNIVERSITY   (Sweden)

^d UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^e NOTTINGHAM TRENT UNIVERSITY   (United Kingdom)

^f UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^g INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646720109     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.195318     Document Type: Article

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