The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards

Superlattices and Microstructures

Volumn 34, Issue 3-6, 2003, Pages 179-184

  Martin, T P ^a   Taylor, R P ^a   Linke, H ^a   Marlow, C A ^a   Hall, G D R ^a   Shorubalko, I ^b   Maximov, I ^b   Seifert, W ^b   Samuelson, L ^b   Fromhold, T M ^c  

^a UNIVERSITY OF OREGON   (United States)

^b LUND UNIVERSITY   (Sweden)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

2DEG; Billiard; FCF; GaInAs InP; Wall profile

Indexed keywords

ELECTRIC CONDUCTANCE; ETCHING; FRACTALS; HETEROJUNCTIONS; QUANTUM INTERFERENCE PHENOMENA; SEMICONDUCTING INDIUM PHOSPHIDE; SENSITIVITY ANALYSIS;

2DEG; BILLIARD; FCF; GAINAS/INP; WALL PROFILE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3242702529     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.006     Document Type: Conference Paper

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