Very low dislocation density AlN substrates for device applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6121, Issue , 2006, Pages

  Schujman, Sandra B ^a   Schowalter, Leo J ^a   Liu, Wayne ^a   Smart, Joseph ^a  

^a Crystal IS Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; DISLOCATIONS (CRYSTALS); ELECTROOPTICAL EFFECTS; EPITAXIAL GROWTH; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS;

DISLOCATION DENSITY; RADIO FREQUENCY (RF) DEVICES; SURFACE PREPARATION;

ALUMINUM NITRIDE;

EID: 33646706376     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.658180     Document Type: Conference Paper

References (7)

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4. R. Datta, et al.; Mater. Res. Soc. Sym. Proc., 831, E8.8.1, (20065)
5. A. H. Ostradrahimi et al., Surf. Sci., 521, 139, (2002)
6. J.A. Smart, et al.; APL 75, 388, (1998)
7. P. Waltereit, et al.; J.J. Appl. Phys., 43, L1520, (2004)