Characterization of ultra thin oxynitrides: a general approach

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 429-434

  Brijs, B ^a   Deleu, J ^a   Conard, T ^a   De Witte, H ^a   Vandervorst, W ^a,b   Nakajima, K ^c   Kimura, K ^c   Genchev, I ^d   Bergmaier, A ^d   Goergens, L ^d   Neumaier, P ^d   Dollinger, G ^d   Dobeli M ^e  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c KYOTO UNIVERSITY   (Japan)

^d TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^e ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; ELLIPSOMETRY; FILM GROWTH; MICROELECTRONIC PROCESSING; NITRIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ELASTIC RECOIL DETECTION; SPECTROSCOPIC ELLIPSOMETRY; ULTRATHIN OXYNITRIDE FILM;

ULTRATHIN FILMS;

EID: 0033885680     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00674-6     Document Type: Article

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