Impacts of phosphorus and aluminum gettering with porous silicon damage for p-type Czochralski silicon used in solar cells technology

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 377-380

  Ben Jaballah, A ^a   Hassen, M ^a   Rahmouni, H ^b   Hajji, M ^a   Selmi, A ^b   Ezzaouia, H ^a  

^a Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Al and P gettering; Hall mobility; Porous silicon; Solar cells

Indexed keywords

ALUMINUM COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; HEATING; PHOSPHORUS; POROUS SILICON; RAPID THERMAL ANNEALING;

AL AND P GETTERING; HALL MOBILITY; INTERSTITIAL OXYGEN;

SOLAR CELLS;

EID: 33646551777     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.11.101     Document Type: Article

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